The CYSI PECVD System for thick SiOₓ and Ge-SiOₓ film deposition is engineered for high-rate deposition of thick dielectric interlayer and capping films. By incorporating germanium-doped silane precursors, it also enables deposition of graded-index Ge-SiOₓ layers for waveguide and photonic device fabrication. High RF power, large-area parallel-plate reactor, and 4-channel MFC gas control ensure uniform, stress-controlled thick film deposition.
Specifications
| Parameter | Value / Details |
|---|
| Product Model | CY-PECVD-GeSiOx |
| RF Frequency | 13.56 MHz |
| RF Power | Up to 3000 W (high-rate deposition) |
| Reactor Type | Parallel plate CCP — large area |
| Electrode Diameter | φ 300 mm |
| Substrate Heater | Up to 400 °C |
| Gas Lines | 4 channels MFC (SiH₄, GeH₄, N₂O, Ar, N₂) |
| Base Pressure | < 5 × 10⁻⁴ Pa |
| Working Pressure | 50–500 Pa |
| Vacuum System | Roots pump + rotary vane pump |
| Deposited Films | SiOₓ (n = 1.45–1.7), Ge-SiOₓ (n = 1.5–2.0) |
| Deposition Rate | Up to 200 nm/min (SiOₓ) |
| Film Stress Control | N₂O / SiH₄ ratio tuning |
| Supply Voltage | AC 380 V / 50 Hz, 3-phase |
| Applications | ILD, planarisation, waveguides, photonics, MEMS |
Trade Information
| Trade Detail | Information |
|---|
| Minimum Order Quantity | 1 Unit |
| Supply Ability | 4 Units Per Month |
| Delivery Time | 3–8 Weeks |
| Main Domestic Market | China |
| Export Markets | Worldwide |
| Payment Terms | T/T, L/C, Western Union, PayPal |
| Packaging | Wooden crate with foam-padded export packing |
| Warranty | 12 Months from date of commissioning |
| After-Sales Service | Online technical support + on-site service available |
| Customization | Available on request |
