The CYSI PECVD System uses 13.56 MHz radio-frequency plasma to deposit high-quality silicon nitride (Si₃N₄), silicon dioxide (SiO₂), amorphous silicon (a-Si:H), and silicon carbide (SiC) thin films at deposition temperatures between 200–400 °C — dramatically lower than thermal CVD. The parallel-plate CCP reactor, automatic impedance-matching network, and 4-channel MFC gas system make it the standard tool for photovoltaics, MEMS passivation, and semiconductor device fabrication.
Specifications
| Parameter | Value / Details |
|---|
| Product Model | CY-PECVD-450 |
| RF Frequency | 13.56 MHz |
| RF Power | Up to 1000 W |
| Reactor Type | Parallel plate CCP (Capacitively Coupled Plasma) |
| Matching Network | Automatic impedance matching |
| Substrate Heater | Up to 400 °C — precision PID control |
| Gas Lines | 4 channels with MFC (SiH₄, NH₃, N₂O, Ar, N₂) |
| Base Pressure | < 5 × 10⁻⁴ Pa |
| Working Pressure | 10–200 Pa (process range) |
| Vacuum System | Roots pump + rotary vane backing pump |
| Deposited Films | Si₃N₄, SiO₂, a-Si:H, SiC, SiON, µc-Si:H |
| Deposition Temperature | 200–400 °C |
| Electrode Diameter | φ 450 mm (4-inch wafer compatible) |
| Control System | PLC + touch-screen HMI |
| Supply Voltage | AC 380 V / 50 Hz, 3-phase |
| Total Power | ≈ 5 kW |
| Applications | Photovoltaics, MEMS, IC passivation, LED encapsulation |
Trade Information
| Trade Detail | Information |
|---|
| Minimum Order Quantity | 1 Unit |
| Supply Ability | 4 Units Per Month |
| Delivery Time | 3–8 Weeks |
| Main Domestic Market | China |
| Export Markets | Worldwide |
| Payment Terms | T/T, L/C, Western Union, PayPal |
| Packaging | Wooden crate with foam-padded export packing |
| Warranty | 12 Months from date of commissioning |
| After-Sales Service | Online technical support + on-site service available |
| Customization | Available on request |
