1200℃ RTP Annealing furnace
CYSI CY-RTP1000 6-inch wafer RTP annealing furnace with real substrate temperature measurement, 10–150°C/s heating rate, ±3°C accuracy, 3-channel MFC gas control, and 5×10⁻⁶ Torr vacuum for semiconductor processing.
The CYSI CY-RTP1000 1200°C RTP Annealing Furnace incorporates patented Real Substrate Temperature Measurement via a flake-type Real T/C KIT positioned in intimate thermal contact with the wafer, eliminating the temperature compensation error of traditional RTP systems. Ultra-fast halogen lamp heating at 10–150°C/s, digital PID control, 3-channel MFC gas management, and stainless steel cold-wall vacuum chamber make this system the preferred choice for semiconductor dopant activation, ohmic contact formation, and oxide growth.
Specifications
| Parameter | Value / Details |
|---|---|
| Product Model | CY-RTP1000-Φ300-T |
| Substrate Size | 6 inches |
| Temperature Range | 150–1200 °C |
| Heating Rate | 10–150 °C/s |
| Temp Uniformity | ≤ ±1.5% @800°C (Si wafer) |
| Temp Control Accuracy | ≤ ±3 °C |
| Vacuum | 5×10⁻³ Torr / 5×10⁻⁶ Torr (2-stage pump) |
| Gas Channels | Up to 3-channel MFC |
| Temperature Control | Fast digital PID |
| Dimensions | 890 × 950 × 1400 mm |
| Applications | Dopant activation, ohmic contacts, CMOS annealing |
Trade Information
| Trade Detail | Information |
|---|---|
| Minimum Order Quantity | 1 Unit |
| Supply Ability | 4 Units Per Month |
| Delivery Time | 1–16 Weeks |
| Main Domestic Market | China |
| Export Markets | Worldwide |
| Payment Terms | T/T, L/C, Western Union, PayPal |
| Packaging | Wooden crate with foam-padded export packing |
| Warranty | 12 Months from date of commissioning |
| After-Sales Service | Online technical support + on-site service available |
| Customization | Available on request |
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