CYSI 1650°C Bridgman single crystal growth furnace for silicon nitride, silicon, sapphire, and SiC crystal growth with controlled temperature gradient, motorised pull mechanism, and inert atmosphere capability.
The CYSI 1650°C Bridgman Single Crystal Growth Furnace applies the Bridgman-Stockbarger method to grow high-quality single crystals of silicon nitride, silicon, sapphire, silicon carbide, and other semiconductor and functional materials. Precise temperature gradient control, a motorised pull mechanism with adjustable withdrawal rate, and inert atmosphere operation combine to produce single crystals with low dislocation density and excellent structural perfection.
| Parameter | Value / Details |
|---|---|
| Maximum Temperature | 1650 °C |
| Growth Method | Bridgman-Stockbarger method |
| Temperature Gradient Control | Precise gradient management for crystal quality |
| Pull Mechanism | Motorised — adjustable withdrawal rate |
| Atmosphere | Inert gas (N₂/Ar) protection |
| Target Crystals | Si₃N₄, Si, Sapphire, SiC, functional crystals |
| Applications | Semiconductor wafer substrates, optical crystals, functional crystal research |
| Trade Detail | Information |
|---|---|
| Minimum Order Quantity | 1 Unit |
| Supply Ability | 4 Units Per Month |
| Delivery Time | 1–16 Weeks |
| Main Domestic Market | China |
| Export Markets | Worldwide |
| Payment Terms | T/T, L/C, Western Union, PayPal |
| Packaging | Wooden crate with foam-padded export packing |
| Warranty | 12 Months from date of commissioning |
| After-Sales Service | Online technical support + on-site service available |
| Customization | Available on request |
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